SST441 [Linear Systems]
MONOLITHIC DUAL N-CHANNEL JFET; 单片双N沟道JFET
| 型号： | SST441 |
| 厂家： | 
Linear Systems |
| 描述： | MONOLITHIC DUAL N-CHANNEL JFET |
| 文件： | 总2页 (文件大小：225K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
U/SST440,441
MONOLITHIC DUAL
N-CHANNEL JFET
Linear Integrated Systems
FEATURES
Direct Replacement for SILICONIX U/SST440 & U/SST441
HIGH CMRR
CMRR ≥ 85dB
IGSS ≤ 1pA
LOW GATE LEAKAGE
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation (Total)
Maximum Currents
U SERIES
SST SERIES
TO-71
SOIC
BOTTOM VIEW
1
2
3
4
8
7
6
5
S1
D1
G1
NC
NC
G2
D2
S2
-65 to +150 °C
-55 to +135 °C
3
1
5
7
G1
D1
S1
S2
2
6
D2
G2
500mW
50mA
Gate Current
Maximum Voltages
Gate to Drain
Gate to Source
Gate to Gate
-25V
-25V
±50V
MATCHING CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
U/SST440
U/SST441
10
Differential Gate to
V
GS1 − VGS2
mV
VDG = 10V, ID = 5mA
Source Cutoff Voltage
20
∆ VGS1 − VGS2
∆T
Differential Gate to Source Cutoff
Voltage Change with Temperature
V
DG = 10V, ID = 5mA
20
µV/°C
TA = -55 to +125°C
VDS = 10V, VGS = 0V
I
DSS1
Gate to Source Saturation Current Ratio
0.07
I
DSS2
g
fs1
Forward Transconductance Ratio2
Common Mode Rejection Ratio
0.97
85
VDS = 10V, ID = 5mA, f = 1kHz
g
fs2
CMRR
dB
VDG = 5 to 10V, ID = 5mA
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
BVGSS
VGS(off)
IDSS
CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
Gate to Source Breakdown Voltage
Gate to Source Cutoff Voltage
Gate to Source Saturation Current3
Gate Leakage Current
-25
-1
6
V
V
mA
IG = -1µA, VDS = 0V
VDS = 10V, ID = 1nA
VDS = 10V, VGS = 0V
VGS = -15V, VDS = 0V
VDG = 10V, ID = 5mA
-3.5
15
-1
-6
30
IGSS
IG
-500
-500
pA
Gate Operating Current
-1
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
ELECTRICAL CHARACTERISTICS CONTINUED @ 25 °C (unless otherwise stated)
SYMBOL
gfs
CHARACTERISTIC
Forward Transconductance
Output Conductance
Input Capacitance
Reverse Transfer Capacitance
Equivalent Input Noise Voltage
MIN TYP MAX UNITS CONDITIONS
4.5
6
70
3
9
200
mS
µS
VDS = 10V, ID = 5mA, f = 1kHz
gos
Ciss
Crss
en
pF
VDS = 10V, ID = 5mA, f = 1MHz
1
4
nV/√Hz VDS = 10V, ID = 5mA, f = 10kHz
SOIC
TO-71
Six Lead
0.014
0.018
1
2
3
4
8
7
6
5
0.230
0.209
0.050
DIA.
0.195
0.175
DIA.
0.189
0.196
0.030
MAX.
0.021
0.150
0.115
0.150
0.157
6 LEADS
0.0040
0.0098
0.500 MIN.
0.050
0.019
0.016
DIA.
0.0075
0.0098
0.2284
0.2440
0.100
DIMENSIONS IN
INCHES
3
7
2
1
5
6
45°
0.046
0.036
0.048
0.028
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.
2. Pulse Test: PW ≤ 300µs Duty Cycle ≤ 3%
3. Assumes smaller value in numerator.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
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